The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
May. 22, 2019
Lumiode, Inc., Bronx, NY (US);
LUMIODE, INC., New York, NY (US);
Abstract
LED structures (e.g., LED arrays) and fabrication methods can reduce or even eliminate deep etching, and associated defect formation, proximate sites of individual LEDs. Such approaches can achieve desired electrical isolation without deep etching, provide a high conductivity current spreading layer, and, or reduce losses otherwise associated with conventional fabrication approaches. Some implementations advantageously lift off or separate an insulating substrate from a wafer to expose a bottom surface of the epitaxial LED layer and forms a backside contact (e.g., ground plane) overlying the bottom surface. Other implementations isolate deep etching away from sensitive regions and locate the backside contact on a top surface of the epitaxial LED layer. Some implementations form light extraction features (e.g., photonic crystals) on the exposed bottom surface. The top surface of the epitaxial LED layer may be undoped to improve electrical isolation. The bottom surface of may be shallow etched to improve light extraction.