The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Mar. 30, 2018
Applicants:

Brookman Technology, Inc., Shizuoka, JP;

Ikegami Tsushinki Co., Ltd., Tokyo, JP;

Japan Atomic Energy Agency, Ibaraki, JP;

Inventors:

Takashi Watanabe, Shizuoka, JP;

Osamu Ozawa, Tokyo, JP;

Kunihiko Tsuchiya, Ibaraki, JP;

Tomoaki Takeuchi, Ibaraki, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/361 (2011.01); H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/376 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/361 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 27/14614 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H04N 5/378 (2013.01); H04N 5/3745 (2013.01); H04N 5/3765 (2013.01); H01L 27/14683 (2013.01);
Abstract

An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.


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