The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jun. 26, 2018
Applicant:

National Chi Nan University, Nantou County, TW;

Inventors:

Yo-Sheng Lin, Taichung, TW;

Chi-Hung Yeh, Nantou County, TW;

Assignee:

National Chi Nan University, Puli Township, Nantou County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/02 (2006.01); H02M 7/217 (2006.01); H02M 3/07 (2006.01); H02J 50/20 (2016.01); H02M 7/10 (2006.01); H02M 7/219 (2006.01);
U.S. Cl.
CPC ...
H02M 7/217 (2013.01); H02J 50/20 (2016.02); H02M 3/07 (2013.01); H02M 7/02 (2013.01); H02M 7/103 (2013.01); H02M 7/219 (2013.01);
Abstract

A radio-frequency/direct-current (RF/DC) converter is operable to receive a high-frequency and high-power RF signal and convert to a DC power. The RF/DC converter includes a first field-effect transistor (FET), a second FET, a third FET and a sixth FET that are cross-coupled. Sources of the first FET and the second FET are connected to an RF signal receiving end. Sources of the third FET and the fourth FET are connected to a potential reference end. The RF/DC converter further includes a fifth FET and a sixth FET connected subsequently to the first FET, the second FET, the third FET and the fourth.


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