The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Dec. 21, 2018
Applicant:

GE Energy Power Conversion Technology Limited, Rugby Warwickshire, GB;

Inventors:

Hendrik Gloes, Berlin, DE;

Martin Geske, Berlin, DE;

Piotr Szczupak, Berlin, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H03K 17/16 (2006.01); H02M 7/538 (2007.01); H02M 1/44 (2007.01); H03K 17/687 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 1/44 (2013.01); H02M 7/538 (2013.01); H03K 17/163 (2013.01); H03K 17/6871 (2013.01); H02M 2001/0054 (2013.01);
Abstract

A method and a device for controlling a commutation process of a load current between two switching modules are disclosed that each have a MOSFET that can be controlled by a gate-source voltage, and an intrinsic-body inverse diode. To reduce oscillations in the down-commutation of the inverse diodes caused by parasitic circuit parameters, after switching off one of the switching modules, the gate-source control voltage applied to this switching module is temporarily switched off until being increased again the vicinity of the threshold voltage for switching on the MOSFET, before and while the other switching module is switched on, in order to commutate the current from the inverse diode of the one switching module to the MOSFET of the other switching module.


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