The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

May. 23, 2017
Applicants:

Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;

MK Electron Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Industry-academia Cooperation Group of Sejong University, Seoul, KR;

Inventors:

Soonsung Suh, Yongin-si, KR;

Jaehyuk Kim, Yongin-si, KR;

Jaemyung Kim, Yongin-si, KR;

Kibuem Kim, Seoul, KR;

Jeongtae Kim, Gimpo-si, KR;

Seungwhan Lee, Seoul, KR;

Yulsang Lee, Dangjin-si, KR;

Jongsoo Cho, Seoul, KR;

Sunghwan Hong, Daejeon, KR;

Assignees:

SAMSUNG SDI CO., LTD., Yongin-si, Gyeonggi-do, KR;

MK ELECTRON CO., LTD., Yongin-si, Gyeonggi-do, KR;

Industry-Academia Cooperation Group of Sejong University, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); H01M 4/134 (2010.01); H01M 10/0525 (2010.01); B22D 13/02 (2006.01); B22D 21/00 (2006.01); B22F 9/00 (2006.01); B22F 9/04 (2006.01); C22C 1/00 (2006.01); C22C 1/02 (2006.01); C22C 1/05 (2006.01); C22C 28/00 (2006.01); H01M 2/16 (2006.01); H01M 4/131 (2010.01); H01M 4/1395 (2010.01); H01M 4/505 (2010.01); H01M 4/525 (2010.01); H01M 4/62 (2006.01); H01M 4/66 (2006.01); H01M 4/04 (2006.01); H01M 4/1391 (2010.01); H01M 10/0568 (2010.01); H01M 10/0569 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/38 (2013.01); B22D 13/02 (2013.01); B22D 21/007 (2013.01); B22F 9/008 (2013.01); B22F 9/04 (2013.01); C22C 1/002 (2013.01); C22C 1/02 (2013.01); C22C 1/05 (2013.01); C22C 28/00 (2013.01); H01M 2/1653 (2013.01); H01M 4/131 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/505 (2013.01); H01M 4/525 (2013.01); H01M 4/623 (2013.01); H01M 4/625 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01); B22F 2009/043 (2013.01); B22F 2302/45 (2013.01); B22F 2998/10 (2013.01); H01M 4/0404 (2013.01); H01M 4/0435 (2013.01); H01M 4/0471 (2013.01); H01M 4/1391 (2013.01); H01M 10/0568 (2013.01); H01M 10/0569 (2013.01); H01M 2004/027 (2013.01); H01M 2220/30 (2013.01); H01M 2300/004 (2013.01); H01M 2300/0034 (2013.01);
Abstract

A negative electrode active material includes a silicon-based alloy represented by Si-M-M-C—B, wherein Mand Mare different from each other and are each independently selected from magnesium, aluminum, titanium, vanadium, chromium, iron, cobalt, nickel, copper, zinc, gallium, germanium, manganese, yttrium, zirconium, niobium, molybdenum, silver, tin, tantalum, and tungsten. In the silicon-based alloy, Si is in a range of about 50 at % to about 90 at %, Mis in a range of about 10 at % to about 50 atom %, and Mis in a range of 0 at % to about 10 at %, based on a total number of Si, M, and Matoms. C is in a range of about 0.01 to about 30 parts by weight, and B is in a range of 0 to about 5 parts by weight, based on a total of 100 parts by weight of Si, M, and M.


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