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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10651377 B1

PDFFull Text
Expired
Date of Patent:
May. 12, 2020

Filed:

Aug. 03, 2018

Storage element, storage device, method for manufacturing the same and driving method

Applicants:

Beijing Boe Display Technology Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Ruiyong Wang, Beijing, CN;

Lianjie Qu, Beijing, CN;

Ruizhi Yang, Beijing, CN;

Yang You, Beijing, CN;

Assignees:

BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing, CN;

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorney:

Brooks Kushman P.C.

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1206 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 29/41733 (2013.01); H01L 29/66765 (2013.01); H01L 29/78678 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); H01L 29/6675 (2013.01);
Abstract

The present disclosure provides a storage element, a storage device, a method for manufacturing the same and a driving method. The method for manufacturing the storage element includes: providing a substrate; preparing a thin film transistor on the substrate; and preparing a storage functional pattern by using a phase change material, in which the storage functional pattern is connected to a drain electrode of the thin film transistor.

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Wang, Ruiyong. (2020). Storage element, storage device, method for manufacturing the same and driving method (U.S. Patent No. 10651377). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10651377

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