The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jan. 23, 2018
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Sophie Bernasconi, Laval, FR;

Christelle Charpin-Nicolle, Fontanil-Cornillon, FR;

Aomar Halimaoui, La Terrasse, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/02 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/10 (2013.01); G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H01L 21/02258 (2013.01); H01L 45/08 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/1273 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1641 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/32 (2013.01); G11C 2213/52 (2013.01); G11C 2213/56 (2013.01);
Abstract

The present invention relates to a memory device comprising a first electrode (), a second electrode () and an active portion that can change conductive state, positioned between a first face of the first electrode () and a first face of the second electrode (). The first electrode () comprises an upper portion forming the first face of the first electrode (). At least one out of the upper portion and the active portion that can change conductive state comprises a porous layer ().


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