The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jan. 14, 2019
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chao-Hsing Chen, Hsinchu, TW;

Jia-Kuen Wang, Hsinchu, TW;

Tzu-Yao Tseng, Hsinchu, TW;

Wen-Hung Chuang, Hsinchu, TW;

Cheng-Lin Lu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/22 (2010.01); H01L 33/46 (2010.01); H01L 33/42 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); F21K 9/23 (2016.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); F21K 9/232 (2016.01); F21Y 115/10 (2016.01); F21K 9/69 (2016.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); F21K 9/23 (2016.08); F21K 9/232 (2016.08); F21K 9/69 (2016.08); F21Y 2115/10 (2016.08); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.


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