The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Jul. 29, 2016
Applicant:
Macom Technology Solutions Holdings, Inc., Lowell, MA (US);
Inventors:
Anthony Kaleta, Lowell, MA (US);
Douglas Carlson, Lowell, MA (US);
Timothy E. Boles, Tyngsboro, MA (US);
Assignee:
MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 21/761 (2006.01); H01L 29/205 (2006.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/761 (2013.01); H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/7786 (2013.01); H01L 29/861 (2013.01); H02M 7/003 (2013.01);
Abstract
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.