The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10651312 B1

PDF
Full Text
Expired
Date of Patent:
May. 12, 2020

Filed:

Jun. 22, 2017
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Xiang Liu, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 29/42376 (2013.01); H01L 29/66742 (2013.01);
Abstract

A flexible thin film transistor and a method for fabricating the same are provided. The flexible thin film transistor has: a flexible substrate; an inorganic insulating layer disposed on the flexible substrate; and a thin film transistor disposed on the inorganic insulating layer. A rough structure is formed on a side surface of the inorganic insulating layer facing toward the thin film transistor.


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Liu, Xiang. (2020). Flexible thin film transistor and method for fabricating the same (U.S. Patent No. 10651312). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10651312

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