The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Mar. 04, 2019
Applicant:
Vishay-siliconix, San Jose, CA (US);
Inventors:
Ayman Shibib, San Jose, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Assignee:
Vishay Siliconix, LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 21/8252 (2006.01); H01L 29/423 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/8252 (2013.01); H01L 29/205 (2013.01); H01L 29/4238 (2013.01); H01L 29/42316 (2013.01); H01L 29/7786 (2013.01); H01L 29/861 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/42364 (2013.01);
Abstract
A device includes a first high electronic mobility transistor (HEMT) and a second HEMT. The first HEMT includes a first gate, a source coupled to the first gate, and a drain coupled to the first gate. The second HEMT includes a second gate coupled to the source and to the drain. The second HEMT has a lower threshold voltage than the first HEMT.