The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Apr. 17, 2019
Applicant:
V Technology Co., Ltd., Yokohama-shi, JP;
Inventor:
Michinobu Mizumura, Yokohama, JP;
Assignee:
V TECHNOLOGY CO., LTD., Yokohama-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/66 (2006.01); H01L 21/268 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 21/20 (2013.01); H01L 21/2026 (2013.01); H01L 21/268 (2013.01); H01L 27/1229 (2013.01); H01L 27/1285 (2013.01); H01L 29/66765 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01);
Abstract
The present invention provides a laser annealing method for irradiating laser light L to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light L while changing an irradiation area of the laser light L on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line C of the irradiation area of the laser light L. The above laser annealing method can reduce a leak current through a simple process.