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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10651277 B1

PDFFull Text
Date of Patent:
May. 12, 2020

Filed:

Mar. 11, 2019

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Yuya Abiko, Ibaraki, JP;

Natsuo Yamaguchi, Ibaraki, JP;

Satoshi Eguchi, Ibaraki, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

SGPatents PLLC

Primary Examiner:

Chuong A Luu

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 21/308 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/02529 (2013.01); H01L 21/26586 (2013.01); H01L 21/308 (2013.01); H01L 29/0634 (2013.01); H01L 29/1608 (2013.01); H01L 29/404 (2013.01); H01L 29/66053 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/66068 (2013.01);
Abstract

In a vertical power MOSFET having a superjunction structure, the withstand voltage of the power MOSFET can be ensured even if the aspect ratios of an n-type column region and a p-type column region are increased so as to vary the impurity concentration of the p-type column region. P-type semiconductor regions PRare formed on the sides of an n-type column NCadjacent to a p-type column region PC. In this configuration, the p-type semiconductor region PRis formed from the upper end of the n-type column region NCto about a half depth of a height from the upper end to the lower end of the side of the n-type column region NC. This inclines the sides of the overall p-type column region including the p-type semiconductor regions PRand the p-type column region PC

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