The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Apr. 17, 2019
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Youting Zhang, Beijing, CN;
Weijie Ma, Beijing, CN;
Ming Zhang, Beijing, CN;
Shichao Fei, Beijing, CN;
Haifeng Hu, Beijing, CN;
Jun Chen, Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
There is provided a production method of a capacitor structure, having the following steps: forming a bottom electrode on a substrate; forming a sacrificial layer, which covers at least one part of the bottom electrode, on the substrate; forming a top electrode, which traverses the bottom electrode and covers at least one part of the sacrificial layer, on the substrate, such that a sacrificial layer is present at a part where an orthographic projection of the top electrode on the substrate and an orthographic projection of the bottom electrode on the substrate overlap; removing the sacrificial layer with a sacrificial layer removing solution to form an air gap. There are also provided a capacitor structure and a sensor.