The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Nov. 29, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ajeong Choi, Suwon-si, KR;
Suk Gyu Hahm, Gyungju-si, KR;
Jeong Il Park, Seongnam-si, KR;
Yong Uk Lee, Gwangju-si, KR;
Jong Won Chung, Hwaseong-si, KR;
Samsung Electronics Co. Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.