The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Mar. 01, 2019
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Kazuhiko Yamamoto, Fujisawa Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A storage device includes: a first conductive layer; a second conductive layer; and a resistance-variable layer disposed between the first conductive layer and the second conductive layer, and including a first chalcogenide containing a first element which is either silicon or germanium. An insulating layer is disposed in a second direction perpendicular to a first direction from the first conductive layer to the second conductive layer with respect to the resistance-variable layer. A first region is disposed between the resistance-variable layer and the insulating layer, and has a third concentration of the first element higher than both a first concentration of the first element in the resistance-variable layer and a second concentration of the first element in the insulating layer.