Semiconductor device and method for manufacturing same

Abstract

A semiconductor device includes: a first thin film transistor () including a crystalline silicon semiconductor layer (); and a second thin film transistor () including an oxide semiconductor layer (). First source/drain electrodes (), () of the first thin film transistor () are provided on the crystalline silicon semiconductor layer via a first interlevel dielectric layer (L); a second source electrode (S) of the second thin film transistor () is electrically connected to a line () which is made of the same conductive film as the first source/drain electrodes; the line () is provided on the second source electrode (S) via a second interlevel dielectric layer (L), and is in contact with the second source electrode (S) within a second contact hole including an opening made in the second interlevel dielectric layer (L); the second source electrode has a multilayer structure including a main layer () and an upper layer () disposed on the main layer such that, under the opening in the second interlevel dielectric layer, the upper layer () has a first aperture and the main layer () has a second aperture (p) or recess, the second aperture (p) or recess being larger than the first aperture (p) as viewed from the normal direction of the substrate.