The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Mar. 01, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Masahiro Koyama, Shinagawa, JP;

Kentaro Ikeda, Kawasaki, JP;

Kazuto Takao, Tsukuba, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/11 (2006.01); H01L 25/16 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 25/115 (2013.01); H01L 24/49 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29387 (2013.01); H01L 2224/29388 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1306 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first transistor being normally-off, a second transistor being normally-on, and a first conductive member. The first transistor includes a first gate, a first source, a first drain, and a first semiconductor member. The first semiconductor member is provided between the first gate and the first drain and between the first source and the first drain. The second transistor includes a second gate, a second source, a second drain, and a second semiconductor member. An orientation from the first semiconductor member toward the first drain is the same as an orientation from the second semiconductor member toward the second gate, toward the second source, and toward the second drain. The first conductive member electrically connects the first drain and the second source.


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