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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10651096 B1

PDFFull Text
Date of Patent:
May. 12, 2020

Filed:

Aug. 09, 2016

Semiconductor device and method for manufacturing same

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Noriaki Tsuchiya, Tokyo, JP;

Yosuke Setoguchi, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 23/544 (2006.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/20 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); H01L 23/544 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/78 (2013.01); H01L 21/0262 (2013.01); H01L 21/0273 (2013.01); H01L 21/02271 (2013.01); H01L 21/02529 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 29/045 (2013.01); H01L 29/1095 (2013.01); H01L 29/1602 (2013.01); H01L 29/167 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/41741 (2013.01); H01L 29/45 (2013.01); H01L 29/4916 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A method for manufacturing a semiconductor device according to the present invention includes a manufacturing step of forming a plurality of unit regions each having a plurality of first regions serving as effective cells in which main current flows, and a second region that has an appearance different from that of the first regions and serves as an ineffective cell in which no main current flows, and an appearance inspection step including a step of imaging the unit region to obtain a captured image, a step of cutting out an inspection image from the captured image based on a position of an alignment pattern containing the second region, and a step of comparing the inspection image with a reference image.

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