The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Sep. 21, 2016
Applicant:

Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;

Inventor:

Yusuke Fukuda, Hanno, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/28 (2006.01); H01L 23/00 (2006.01); H01L 29/45 (2006.01); H01L 21/04 (2006.01); H01L 29/872 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 21/0485 (2013.01); H01L 21/0495 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 29/45 (2013.01); H01L 29/47 (2013.01); H01L 29/872 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05078 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05547 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05576 (2013.01); H01L 2224/05578 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/35121 (2013.01); H01L 2924/3651 (2013.01);
Abstract

A semiconductor device includes: a semiconductor layer of silicon carbide including a plurality of layers disposed on a main surface side; an electrode layer that is one of the plurality of layers, wherein the electrode layer has an electrode connecting surface to which a conductive connecting member is connected, and the electrode layer is composed mainly of silver; and a first metal layer that is a layer, different from the electrode layer, among the plurality of layers, wherein the first metal layer has a first bonding surface bonded onto the electrode layer such that the electrode connecting surface is exposed to an outside, and a second bonding surface electrically connected to the semiconductor layer, and the first metal layer is composed mainly of titanium carbide.


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