The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Mar. 30, 2017
Applicant:

U.s.a. As Represented BY the Administrator of the National Aeronautics and Space Administration, Washington, DC (US);

Inventors:

Sang H. Choi, Poquson, VA (US);

Adam J. Duzik, Yorktown, VA (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/40 (2006.01); C30B 29/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); C30B 23/025 (2013.01); C30B 23/063 (2013.01); C30B 29/406 (2013.01); C30B 29/52 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02376 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01);
Abstract

A method of forming an epitaxial layer on a substrate such as a sapphire wafer that does not readily absorb thermal radiation. The method includes coating a first side surface of the substrate with an energy-absorbing opaque material. The opaque material forms a thermally absorptive coating on the substrate. The coated substrate may be heated to remove contaminants from the thermally absorptive coating. The coated substrate is positioned in a vacuum deposition chamber and heated by directing radiative energy onto the thermally absorptive coating. An epitaxial layer such as GaN or SiGe is formed on a second side surface of the substrate opposite the thermally absorptive coating.


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