The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Aug. 15, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Jon McChesney, Fremont, CA (US);

Alexander Paterson, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H03H 7/38 (2006.01); H01J 37/244 (2006.01); H03H 7/40 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01J 37/244 (2013.01); H01J 37/3244 (2013.01); H01J 37/3255 (2013.01); H03H 7/38 (2013.01); H03H 7/40 (2013.01);
Abstract

Systems and methods for tuning to reduce reflected power in multiple states are described. The methods include determining values of one or more parameters of an impedance matching circuit so that reflected power is reduced for multiple states. Such a reduction in the reflected power increases a life of a radio frequency generator coupled to the impedance matching circuit while simultaneously processing a substrate using the multiple states.


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