The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jan. 16, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Changwook Jeong, Hwaseong-si, KR;

Sanghoon Myung, Goyang-si, KR;

Min-Chul Park, Hwaseong-si, KR;

Jeonghoon Ko, Hwaseong-si, KR;

Jisu Ryu, Hwaseong-si, KR;

Hyunjae Jang, Hwaseong-si, KR;

Hyungtae Kim, Seoul, KR;

Yunrong Li, Seoul, KR;

Min Chul Jeon, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 29/50 (2006.01); G11C 29/48 (2006.01); G11C 29/56 (2006.01); G01R 31/27 (2006.01); G01R 31/3185 (2006.01); G01R 31/30 (2006.01); G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G01R 31/2621 (2013.01); G01R 31/275 (2013.01); G01R 31/3004 (2013.01); G01R 31/318511 (2013.01); G11C 29/48 (2013.01); G11C 29/56 (2013.01); G11C 2029/5004 (2013.01); G11C 2029/5006 (2013.01);
Abstract

A fault analysis method of a semiconductor fault analysis device is provided. The fault analysis method includes: receiving measurement data measured corresponding to a semiconductor device; generating double sampling data based on the measurement data and reference data; performing a fault analysis operation with respect to the double sampling data; classifying a fault type of the semiconductor device based on a result of the fault analysis operation; and outputting information about the fault type.


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