The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Nov. 15, 2018
Applicant:

Shanghai Huali Integrated Circuit Mfg. Co., Ltd., Shanghai, CN;

Inventors:

Pinhan Chen, Shanghai, CN;

Dongcheng Wu, Shanghai, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G11C 11/419 (2013.01); G11C 2029/5006 (2013.01);
Abstract

The present disclosure provides a testing method for reading current of static random access memory, the method comprising: for each basic static random access memory cell, coupling a gate of a first pull-down transistor to a first bit line; setting a word line and the first bit line at a high potential; and sensing current of the first bit line. The testing method provided in the present disclosure can also be applied to static random access memory cells arranged in matrices, so as to efficiently complete the tests for the reading current of the static random access memory in batches.


Find Patent Forward Citations

Chen, Pinhan. (2020). Testing method for reading current of static random access memory (U.S. Patent No. 10650909). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10650909

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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