The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Oct. 04, 2018
Applicant:

Hannstar Display Corporation, Taipei, TW;

Inventor:

Mu-Kai Kang, Pingtung County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); G02F 1/1343 (2006.01); H01L 27/12 (2006.01); G02F 1/1335 (2006.01); G02F 1/1339 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/134363 (2013.01); G02F 1/136286 (2013.01); H01L 27/1222 (2013.01); G02F 1/13394 (2013.01); G02F 1/133512 (2013.01); G02F 1/133514 (2013.01); G02F 2001/134318 (2013.01); G02F 2001/134381 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G02F 2202/10 (2013.01); H01L 27/1225 (2013.01); H01L 29/0847 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01);
Abstract

A pixel structure includes a substrate, a thin film transistor and a common electrode. The thin film transistor is disposed on the substrate, wherein a semiconductive active layer of the thin film transistor has a channel region disposed between a source and a drain, the channel region includes a main channel region and at least one sub channel region, a channel length of the main channel region is less than a channel length of the at least one sub channel region, and the channel length of the main channel region is equal to a minimum of a channel length of the channel region. The common electrode is disposed on the thin film transistor, and the common electrode overlaps at least a portion of the at least one sub channel region, wherein the common electrode has an opening exposing the main channel region.


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