The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Nov. 30, 2015
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Inventor:
Yue Wu, Shenzhen, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); H01L 27/12 (2013.01); H01L 27/124 (2013.01); H01L 29/06 (2013.01); H01L 29/08 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/786 (2013.01); H01L 29/78696 (2013.01);
Abstract
Provided is a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a substrate and a thin film transistor formed on the substrate, wherein a source and a drain of the thin film transistor have complementary V-shaped structures, so as to form a V-shaped space region between the source and the drain, such that when the thin film transistor is in operation, a V-shaped conductive channel is formed in a semiconductor layer of the thin film transistor. An activation current of the thin film transistor can be increased.