The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Dec. 06, 2017
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;

Inventor:

Yanxi Ye, Guangdong, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
G02F 1/134309 (2013.01); G02F 1/1368 (2013.01); G02F 1/136213 (2013.01); G02F 1/136286 (2013.01); G09G 3/3677 (2013.01); G09G 3/3688 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0439 (2013.01);
Abstract

This invention discloses a pixel structure comprising: a scan line, and a data line, being crossed with the scan line to define a pixel unit. The pixel unit comprises a pixel electrode including a main body portion and a peripheral portion; a pixel driving element; and a common electrode disposed in an overlay structure with the pixel electrode. The common electrode forms a storage capacitor with the pixel electrode, and includes an outside portion adjacent to the data or scan line. The pixel electrode further includes an extension portion located outside the peripheral portion. The extension portion electrically connects the peripheral portion and forms an evading hole therebetween. The outside portion of the common electrode corresponds to the evading hole. The present invention further discloses a liquid crystal display panel. This invention has advantages of increasing the capacity of the storage capacitor and improving the parasitic capacitance and dark veins.


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