The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
May. 05, 2017
University of Southern California, Los Angeles, CA (US);
Chongwu Zhou, Los Angeles, CA (US);
Ahmad Abbas, Los Angeles, CA (US);
UNIVERSITY OF SOUTHERN CALIFORNIA, Los Angeles, CA (US);
Abstract
The inventors experimentally demonstrated NOgas sensing performance of multilayer black phosphorous (BP) field effect transistors. The BP sensors were sensitive to NOconcentration down to 5 ppb making them comparable in sensitivity to the best 2D material based sensors. Raman spectroscopy comparison revealed no apparent change in the spectra before and after exposure to NO, which shows that thick BP flakes can maintain their relative stability after sensing. Moreover, the BP device sensing performance fitted well with the Langmuir Isotherm for molecules adsorbed on a surface, which confirms charge transfer as the dominant mechanism for sensing. The systematic increase in conductance with increasing NOconcentrations suggests NOmolecules withdraw electrons and dope BP flakes with holes. These results lay the ground work for BP to be applied to various sensing applications including chemical, gas, and bio-sensors.