The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Jan. 09, 2018
Slt Technologies, Inc., Los Angeles, CA (US);
Wenkan Jiang, Corona, CA (US);
Dirk Ehrentraut, Santa Barbara, CA (US);
Mark P. D'Evelyn, Santa Barbara, CA (US);
SLT TECHNOLOGIES, INC., Los Angeles, CA (US);
Abstract
Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×10cm; an impurity concentration of oxygen between about 2×10cmand about 1×10cm; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and CI greater than about 1×10cm; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cmat wavenumbers of approximately 3175 cm, 3164 cm, and 3150 cm; and wherein, at wavenumbers between about 3200 cmand about 3400 cmand between about 3075 cmand about 3125 cm, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.