The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Aug. 28, 2017
Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventors:

Toru Kinoshita, Tokyo, JP;

Toshiyuki Obata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); C30B 29/38 (2006.01); C30B 25/02 (2006.01); C23C 16/34 (2006.01); H01L 21/205 (2006.01); C30B 25/18 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C23C 16/34 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/38 (2013.01); H01L 21/205 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01);
Abstract

Provided is a group III nitride stacked body having an n-type AlGaN (0.5≤X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlGaN (0.5≤X<1) layer has at least a stacked structure in which a first n-type AlGaN (0.5≤X1<1) layer, a second n-type AlGaN (0.5≤X2<1) layer, and a third n-type AlGaN (0.5≤X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1−X2|≤0.1, and satisfy 0<|X2−X3|≤0.1.


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