The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Aug. 28, 2017
Canon Kabushiki Kaisha, Tokyo, JP;
Koichiro Nakanishi, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A light-emitting element includes, on a substrate, a shift thyristor and a light-emitting thyristor. The shift thyristor and the light-emitting thyristor each include a semiconductor multilayer structure consisting of first to fourth semiconductor layers stacked with alternating conductivity types. The shift thyristor includes a current diffusion layer in contact with the semiconductor multilayer structure, and a first metal electrode in this order, or the first metal electrode which is in contact with the semiconductor multilayer structure on the semiconductor multilayer structure; and wherein in the shift thyristor, a region in which a region in which the current diffusion layer or the first metal electrode and the semiconductor multilayer structure come into contact with each other is projected in a stacked direction of the semiconductor multilayer structure is included in a region in which the first metal electrode is projected in the stacked direction.