The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Mar. 06, 2018
Industrial Technology Research Institute, Hsinchu, TW;
Intellectual Property Innovation Corporation, Hsinchu, TW;
Tai-Jui Wang, Kaohsiung, TW;
Yung-Hui Yeh, Hsinchu, TW;
Jui-Wen Yang, New Taipei, TW;
Hsiao-Chiang Yao, Kaohsiung, TW;
Chun-Hung Chu, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Intellectual Property Innovation Corporation, Hsinchu, TW;
Abstract
A thin film transistor including a flexible substrate, a semiconductor layer, a first gate, and a first gate dielectric layer is provided. The semiconductor layer is located on the flexible substrate. The first gate is located on the flexible substrate and corresponds to a portion of the semiconductor layer. The first gate dielectric layer is located between the first gate and the semiconductor layer. The first gate dielectric layer is in contact with the semiconductor layer, and the hydrogen atom concentration of the first gate dielectric layer is less than 6.5×10atoms/cm. A method of manufacturing the thin film transistor is also provided.