The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Jan. 16, 2017
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Inventor:
Longqiang Shi, Guangdong, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78612 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 27/1214 (2013.01); H01L 29/66757 (2013.01); H01L 29/78618 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01);
Abstract
Disclosed are an LTPS-based CMOS component and a method for manufacturing the same. The CMOS component includes an NMOS type LTPS. PN junctions are provided in an NMOS type LTPS channel to reduce the movement speed of electrons in the channel, so that hot electron effects can be avoided. The LTPS-based CMOS component can reduce the movement speed of electrons and avoid hot electron effects.