The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Jan. 29, 2018
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jiangbo Chen, Beijing, CN;

Young Suk Song, Beijing, CN;

Hongda Sun, Beijing, CN;

Guoying Wang, Beijing, CN;

Wei Liu, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 21/44 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 21/44 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/14603 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01);
Abstract

The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.


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