The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Aug. 30, 2017
Applicant:
Monterey Research, Llc, Santa Clara, CA (US);
Inventors:
Assignee:
MONTEREY RESEARCH, LLC, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/3211 (2013.01); H01L 21/32055 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/511 (2013.01); H01L 29/792 (2013.01);
Abstract
A method to fabricate a non-planar memory device including forming a multi-layer silicon nitride structure substantially perpendicular to a top surface of the substrate. There may be multiple non-stoichiometric silicon nitride layers, each including a different or same silicon richness value from one another.