The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Jan. 10, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Hajime Sasaki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor layer () is provided on a substrate (). A gate electrode (), a source electrode () and a drain electrode () are provided on the semiconductor layer (). A first passivation film () covers the gate electrode () and the semiconductor layer (). A source field plate () is provided on the first passivation film (), and extends from the source electrode () to a space between the gate electrode () and the drain electrode (). A second passivation film () covers the first passivation film () and the source field plate (). The first passivation film () has a quasi-conductive thin film () provided at least between the gate electrode () and the drain electrode () and having an electric resistivity of 1.0 Ωcm to 10Ωcm.