The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Sep. 21, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Choeun Lee, Pocheon-si, KR;

Seokhoon Kim, Suwon-si, KR;

Sanggil Lee, Ansan-si, KR;

Seung Hun Lee, Hwaseong-si, KR;

Min-Hee Choi, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/04 (2006.01); H01L 27/11 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 21/3105 (2006.01); H01L 29/167 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/308 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 27/092 (2013.01); H01L 27/1104 (2013.01); H01L 29/045 (2013.01); H01L 29/0673 (2013.01); H01L 29/1037 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66772 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 21/02579 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/31053 (2013.01); H01L 29/0653 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01);
Abstract

Disclosed is a semiconductor device that comprises a substrate including a first active pattern vertically protruding from a top surface of the substrate, and a first source/drain pattern filing a first recess formed on an upper portion of the first active pattern. The first source/drain pattern comprises a first semiconductor pattern and a second semiconductor pattern on the first semiconductor pattern. The first semiconductor pattern has a first face, a second face, and a first corner edge defined when the first face and the second face meet with each other. The second semiconductor pattern covers the first face and the second face of the first semiconductor pattern and exposes the first corner edge.


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