The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Dec. 28, 2017
Alpha and Omega Semiconductor (Cayman) Ltd., Grand Cayman, KY;
Karthik Padmanabhan, San Jose, CA (US);
Lingpeng Guan, San Jose, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Jian Wang, Portland, OR (US);
Lei Zhang, Portland, OR (US);
ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD., Grand Cayman, KY;
Abstract
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a combination of shielded trench gate structure and a superjunction structure within an epitaxial layer including alternating n-doped and p-doped columns in an a drift region. In one example the gate trenches are formed in and over n-doped columns that have an extra charge region near and adjacent to the lower portion of the corresponding gate trench. The extra charge is balanced due to the shield electrodes in the gate trenches.