The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Dec. 12, 2013
Applicant:

Beijing Institute of Nanoenergy and Nanosystems, Beijing, CN;

Inventors:

Zhonglin Wang, Beijing, CN;

Wenzhuo Wu, Beijing, CN;

Xiaonan Wen, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/20 (2006.01); G01L 9/08 (2006.01); H01L 41/113 (2006.01); H01L 41/047 (2006.01); H01L 41/053 (2006.01); H01L 41/187 (2006.01); H01L 41/193 (2006.01); H01L 41/29 (2013.01); H01L 29/78 (2006.01); G01L 1/16 (2006.01); H01L 41/22 (2013.01); H01L 41/317 (2013.01);
U.S. Cl.
CPC ...
H01L 27/20 (2013.01); G01L 1/16 (2013.01); G01L 9/08 (2013.01); H01L 29/78 (2013.01); H01L 41/0477 (2013.01); H01L 41/0533 (2013.01); H01L 41/1132 (2013.01); H01L 41/187 (2013.01); H01L 41/1876 (2013.01); H01L 41/193 (2013.01); H01L 41/22 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01);
Abstract

The disclosure provides a transistor array including a substrate and a plurality of transistor elements sharing the substrate. Each of the transistor elements includes: a bottom electrode disposed on the substrate and a connection wire for the bottom electrode; a piezoelectric body disposed on the bottom electrode, wherein the piezoelectric body is made of piezoelectric material; and a top electrode disposed on the piezoelectric body. The disclosure also provides a method for manufacturing a transistor array. The transistor array contains transistor elements which are two-terminal devices. Piezoelectric bodies with piezoelectric properties are provided between the top electrodes and bottom electrodes of the transistor array. The carrier transport progress of the transistor elements in the transistor array device can be effectively regulated or triggered by strains or stresses applied on the transistor elements.


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