The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Oct. 02, 2018
Omnivision Technologies, Inc., Santa Clara, CA (US);
Xin Wang, San Jose, CA (US);
Dajiang Yang, San Jose, CA (US);
Siguang Ma, Mountain View, CA (US);
Keiji Mabuchi, Los Altos, CA (US);
Bill Phan, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Dyson Tai, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.