The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

May. 21, 2018
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Yunping Di, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); G06K 9/00 (2006.01); H01L 29/786 (2006.01); H01L 21/027 (2006.01); H01L 27/06 (2006.01); H01L 29/739 (2006.01); H01L 31/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1274 (2013.01); G06K 9/0002 (2013.01); G06K 9/00087 (2013.01); H01L 21/0273 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02675 (2013.01); H01L 27/0629 (2013.01); H01L 27/1222 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01); H01L 29/6609 (2013.01); H01L 29/66757 (2013.01); H01L 29/7391 (2013.01); H01L 29/78621 (2013.01); H01L 29/78675 (2013.01); H01L 31/10 (2013.01);
Abstract

A method for manufacturing an array substrate, an array substrate, and a fingerprint recognition device. The method includes: forming a plurality of polysilicon patterns on a substrate, the plurality of polysilicon patterns including a first polysilicon pattern for forming the PIN-type diode and a second polysilicon pattern for forming the transistor, each polysilicon pattern including a first sub-region, a second sub-region, and a third sub-region between the first sub-region and the second sub-region; using a first doping process to dope the first sub-region of the first polysilicon pattern and the first sub-region and the second sub-region of the second polysilicon pattern with one of P-type ions and N-type ions respectively; and using a second doping process to dope the second sub-region of the first polysilicon pattern with the other of P-type ions and N-type ions.


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