The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Dec. 21, 2018
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Nam Jae Lee, Chungcheongbuk-do, KR;
Jung Dal Choi, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); H01L 27/11582 (2017.01); H01L 23/528 (2006.01); G11C 16/14 (2006.01); H01L 23/532 (2006.01); H01L 27/11556 (2017.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 13/0097 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); H01L 23/528 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 27/11556 (2013.01); H01L 27/249 (2013.01); G11C 2213/71 (2013.01); G11C 2213/75 (2013.01);
Abstract
A semiconductor device includes: a stack structure; a source connection structure penetrating the stack structure; n first channel rows located at one side of the source connection structure, the n first channel rows including channel patterns; and n+k second channel rows located at the other side of the source connection structure, at least one channel row among the n+k second channel rows including dummy channel patterns, wherein the n and k are integers.