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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10643998 B1

PDFFull Text
Date of Patent:
May. 05, 2020

Filed:

Oct. 04, 2019

Semiconductor device having first and second fin-type patterns and method of fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myoung Ho Kang, Suwon-si, KR;

Gyeongseop Kim, Suwon-si, KR;

Jeong Lim Kim, Seoul, KR;

Jae Myoung Lee, Seoul, KR;

Heung Suk Oh, Bucheon-si, KR;

Yeon Hwa Lim, Seoul, KR;

Joong Won Jeon, Seoul, KR;

Sung Min Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Onello & Mello, LLP

Primary Examiner:

Caleb E Henry

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/033 (2006.01); H01L 21/8234 (2006.01); H01L 21/308 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/0334 (2013.01); H01L 21/3083 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/0657 (2013.01); H01L 29/41791 (2013.01);
Abstract

A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

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