The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Apr. 10, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Changseop Yoon, Yangsan-si, KR;

Jayeol Goo, Seongnam-si, KR;

Sang Gil Kim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823456 (2013.01); H01L 29/0847 (2013.01); H01L 29/4238 (2013.01); H01L 29/7848 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01);
Abstract

A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.


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