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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10643905 B1

PDFFull Text
Date of Patent:
May. 05, 2020

Filed:

May. 23, 2019

Ic unit and method of manufacturing the same, and electronic device including the same

Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Huilong Zhu, Poughkeepsie, NY (US);

Zhengyong Zhu, Beijing, CN;

Assignee:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Attorney:

Schwegman Lundberg & Woessner, P.A.

Primary Examiner:

Matthew E Warren

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/3065 (2006.01); B82Y 10/00 (2011.01); H01L 29/267 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/15 (2006.01); H01L 29/205 (2006.01); H01L 29/45 (2006.01); H01L 29/778 (2006.01); H01L 21/308 (2006.01); H01L 21/822 (2006.01); H01L 27/092 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823885 (2013.01); B82Y 10/00 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/2252 (2013.01); H01L 21/2258 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/324 (2013.01); H01L 21/8221 (2013.01); H01L 21/82345 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/04 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/1095 (2013.01); H01L 29/152 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01); H01L 29/41741 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/6656 (2013.01); H01L 29/66431 (2013.01); H01L 29/66439 (2013.01); H01L 29/66462 (2013.01); H01L 29/66469 (2013.01); H01L 29/66522 (2013.01); H01L 29/66666 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/7788 (2013.01); H01L 29/7827 (2013.01); H01L 29/78642 (2013.01); H01L 21/31053 (2013.01); H01L 29/0649 (2013.01);
Abstract

There are provided an Integrated Circuit (IC) unit, a method of manufacturing the same, and an electronic device including the IC unit. According to an embodiment, the IC unit includes a first source/drain layer, a channel layer and a second source/drain layer for a first device and a first source/drain layer, a channel layer and a second source/drain layer for a second device stacked in sequence on a substrate. In the first device, the channel layer includes a first portion and a second portion separated from each other. The first source/rain layer and the second source/drain layer each extend integrally to overlap both the first portion and the second portion of the channel layer. The IC unit further includes a first gate stack surrounding a periphery of the first portion and also a periphery of the second portion of the channel layer of the first device, and a second gate stack surrounding a periphery of the channel layer of the second device.

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