The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Sep. 19, 2018
Robert Bosch Gmbh, Stuttgart, DE;
Heiko Stahl, Reutlingen, DE;
Jochen Reinmuth, Reutlingen, DE;
Markus Kuhnke, Wannweil, DE;
Stefan Majoni, Weil im Schoenbuch, DE;
Timo Schary, Aichtal-Neuenhaus, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method for producing a via in a wafer includes providing a wafer, comprising silicon. The method includes producing a conductive region, in the form of a conductor track, preferably composed of polycrystalline silicon, in the wafer. The method includes producing a hole in the wafer such that the hole is fluidically connected to the conductive region and the sidewalls of the hole comprise silicon. The method includes applying a tungsten hexafluoride-resistant protective layer, produced from silicon oxide, in the region of the surface of the hole that is to be produced or has been produced, such that an opening of the hole is free of a protective layer. The method includes applying tungsten hexafluoride to the hole and the region of the opening of the hole by a reducing-agent-free vapor phase deposition process, preferably in the form of a CVD process, for producing the via.