The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Jan. 11, 2018
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Takahiro Kitazawa, Kyoto, JP;

Kazuhiko Fuse, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/66 (2006.01); H01L 21/68 (2006.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/67288 (2013.01); H01L 21/681 (2013.01); H01L 21/6875 (2013.01); H01L 21/68707 (2013.01); H01L 21/68785 (2013.01); H01L 22/26 (2013.01); H01L 21/2253 (2013.01); H01L 21/2686 (2013.01); H01L 22/10 (2013.01);
Abstract

A semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon is warped along an axis, i.e., a diameter along a <100> direction of the semiconductor wafer when irradiated with a flash of light. The semiconductor wafer is placed on a susceptor while the direction of the semiconductor wafer is adjusted so that the diameter along the <100> direction coincides with an optical axis of an upper radiation thermometer. This adjustment makes a diameter along a direction in which a warp of the semiconductor wafer is smallest during irradiation with a flash of light coincide with the optical axis of the upper radiation thermometer. As a result, the semiconductor wafer is hardly warped along the optical axis direction of the upper radiation thermometer even during irradiation with a flash of light, thus hardly changing the emissivity of the semiconductor wafer, so that it is possible to accurately measure the temperature of an upper surface of the semiconductor wafer.


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