Manufacturing method of nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element

Abstract

A manufacturing method of a nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprises a first step of forming an n-type semiconductor layer composed of an n-type AlGaN-based semiconductor (1≥X≥0.5) on an upper surface of an underlying portion including a sapphire substrate, a second step of forming, above the n-type semiconductor layer, an active layer that includes a light-emitting layer composed of an AlGaN-based semiconductor (X>Y>0) and that is composed of an AlGaN-based semiconductor as a whole, and a third step of forming a p-type semiconductor layer composed of a p-type AlGaN-based semiconductor (1≥Z>Y) above the active layer. In the manufacturing method, a growth temperature at the second step is higher than 1200° C. and equal to or higher than a growth temperature at the first step.