The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Jul. 19, 2017
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Bertrand Delaet, Bernin, FR;

Sophie Giroud, Saint-Egreve, FR;

Rachid Hida, Cras, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 41/02 (2006.01); G01R 33/038 (2006.01); H01F 10/30 (2006.01); G01R 33/00 (2006.01); H01F 41/30 (2006.01); G01R 33/028 (2006.01); H01F 1/00 (2006.01); H01F 10/32 (2006.01); H01F 7/02 (2006.01);
U.S. Cl.
CPC ...
H01F 41/0253 (2013.01); G01R 33/0052 (2013.01); G01R 33/0286 (2013.01); G01R 33/038 (2013.01); H01F 1/0009 (2013.01); H01F 10/30 (2013.01); H01F 10/3218 (2013.01); H01F 10/3272 (2013.01); H01F 41/30 (2013.01); H01F 41/304 (2013.01); H01F 7/021 (2013.01);
Abstract

A permanent magnet including, at least once per group of ten consecutive ferromagnetic layers, a growth layer directly interposed between a top antiferromagnetic layer of a previous pattern and a bottom antiferromagnetic layer of a following pattern. This growth layer is entirely realized in a nonmagnetic material chosen from the group made up of the following metals: Ta, Cu, Ru, V, Mo, Hf, Mg, NiCr and NiFeCr, or it is realized by a stack of several sublayers of nonmagnetic material disposed immediately on one another, at least one of these sublayers being entirely realized in a material chosen from the group. The thickness of the growth layer is greater than 0.5 nm.


Find Patent Forward Citations

Loading…