The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Feb. 08, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Kenneth Louie, Sunnyvale, CA (US);

Anirudh Amarnath, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01);
Abstract

A memory device and associated techniques improve a settling time of bit lines in a memory device during a sensing operation, such as read or verify operation. Supply voltage from power supply terminals in the sense circuits is briefly toggled during a discharge of a selected bit line in response to a voltage on a selected word line being increased to a second word line level or higher. This helps to create an electrical path from the selected bit line through to a supply terminal for discharging the selected bit line such that a settling time of a voltage of the selected bit line is shortened in association with a target memory cell transitioning from a non-conductive state to a conductive state.


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